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File name: | hn1b01fu_071101.pdf [preview hn1b01fu 071101] |
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Mfg: | Toshiba |
Model: | hn1b01fu 071101 🔎 |
Original: | hn1b01fu 071101 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Toshiba hn1b01fu_071101.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 10-08-2020 |
User: | Anonymous |
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File name hn1b01fu_071101.pdf HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) JEDEC JEITA TOSHIBA 2-2J1A Weight: 6.8 mg (typ.) Q1 Absolute Maximum Ratings (Ta = 25 |
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